Paper Title:
Recombination Enhanced Defect Annealing in 4H-SiC
  Abstract

Recombination enhanced defect annealing of intrinsic defects in 4H-SiC, created by low energy electron irradiation, has been observed. A reduction the defect concentration at temperature lower than the normal annealing temperature of 400º C and 800°C is observed after either above bandgap laser excitation or forward biasing of a pin-diode. The presence of the defects has been studied both electrically and optically using capacitance transient spectroscopy and low temperature photoluminescence. Photoluminescence measurements show that several lines, normally detected after electron irradiation, have almost or entirely disappeared by recombination enhanced annealing at room temperature. From capacitance transient measurements, the annealing enhancement is found to be largest for the HS2 hole trap, while the EH1 and EH3 electron traps also anneal out by recombination enhanced reaction but at a lower rate.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
369-372
DOI
10.4028/www.scientific.net/MSF.483-485.369
Citation
L. Storasta, F.H.C. Carlsson, P. Bergman, E. Janzén, "Recombination Enhanced Defect Annealing in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 369-372, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
Abstract:High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...
599
Authors: Hong Hua Zhang, Wei Min Gao, Y.L. Shen, B.S. Li
Abstract:Raman scattering spectroscopy, ultraviolet and visible absorption spectroscopy and Rutherford backscattering spectrometry were employed to...
287
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625