Paper Title:
Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC
  Abstract

Photoluminescence (PL) and time resolved PL are well established as important experimental techniques to study electronic properties of SiC. We studied the influence of ionimplantation on the photoluminescence peak at 423nm and the variation of the minority carrier lifetime (MCL).

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
373-376
DOI
10.4028/www.scientific.net/MSF.483-485.373
Citation
R. Reitano, M. Zimbone, P. Musumeci, P. Baeri, "Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 373-376, 2005
Online since
May 2005
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