Paper Title:
Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition
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Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
381-384
DOI
10.4028/www.scientific.net/MSF.483-485.381
Citation
M. Kato, S. I. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto, "Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition", Materials Science Forum, Vols. 483-485, pp. 381-384, 2005
Online since
May 2005
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