Paper Title:
Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide
  Abstract

A comparison study of radiation damage in n-type silicon grown by the floating zone technique and n-type silicon carbide grown by the sublimation epitaxy technique was carried out for the first time under the same irradiation conditions. This comparison is drawn for an energy region of fast electrons at ≈ 1 MeV where Frenkel pairs as primary defects, i e the self-interstials bound to their parent vacant sites at a distance of a few lattice spacings, are produced most effectively. The removal rates of charge carriers in n-Si and n-SiC (4H and 6H) were found to be about 0.23 cm-1 and 0.015 cm-1, respectively. The possible reasons of the observed difference are briefly discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
385-388
DOI
10.4028/www.scientific.net/MSF.483-485.385
Citation
V. V. Kozlovski, E. V. Bogdanova, V. V. Emtsev, K. V. Emtsev, A. A. Lebedev, V.N. Lomasov, "Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 385-388, 2005
Online since
May 2005
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