Paper Title:
Study of Ion Induced Damage in 4H-SiC
  Abstract

The damage produced by 2 MeV protons on a 4H-SiC Schottky diode has been investigated by monitoring the charge collection efficiency as the function of the ion fluence. A new algorithm based on the Shockley-Ramo-Gunn theorem has been developed to interpret the experimental results. The fitting procedure provides a parameter which is proportional to the average number of active electrical traps generated by a single ion, which can be profitably used to estimate the radiation hardness of the material.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
389-392
DOI
10.4028/www.scientific.net/MSF.483-485.389
Citation
A. Lo Giudice, P. Oliveira, F. Fizzotti, C. Manfredotti, E. Vittone, S. Bianco, G. Bertuccio, R. Casiraghi, M. Jaksic, "Study of Ion Induced Damage in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 389-392, 2005
Online since
May 2005
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Price
$32.00
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