Paper Title:
Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC
  Abstract

Planar defects have been found in nitrogen doped 2" 4H-SiC crystals grown on off-axis seeds. The doping level was 1×1019cm-3, which is below the critical one for the thermally activated cubic stacking fault formation in the 4H matrix. Planar defects in the doped region are nucleated on the whole seed surface outside the growth facet. They are coexisting 15R and 6H lamellas of unitcell height as revealed by means of luminescence and high resolution transmission electron microscopy. These inclusions are preferably formed at the rim of the growth facet, where polytype change occurs after switching off the nitrogen flow during growth.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
39-42
DOI
10.4028/www.scientific.net/MSF.483-485.39
Citation
D. Siche, M. Albrecht, J. Doerschel , K. Irmscher, H. J. Rost, M. Rossberg, D. Schulz, "Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 39-42, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Nikolaos Tsavdaris, Kanaparin Ariyawong, Eirini Sarigiannidou, Jean Marc Dedulle, Odette Chaix-Pluchery, Didier Chaussende
Chapter 2: 4H-SiC and 15R-SiC – Growth and Characterization
Abstract:We report on the stabilization of 15R Silicon Carbide (15R-SiC) grown by seeded sublimation method. It was found that polytype transitions...
61
Authors: Nikolaos Tsavdaris, Kanaparin Ariyawong, Odette Chaix-Pluchery, Jean Marc Dedulle, Eirini Sarigiannidou, Didier Chaussende
Chapter 1: SiC Bulk Growth
Abstract:We report on polytype destabilization during bulk crystal growth of Silicon Carbide by seeded sublimation method. Polytype transitions are...
13
Authors: Xiang Long Yang, Kun Yang, Xiu Fang Chen, Yan Peng, Xiao Bo Hu, Xian Gang Xu
Chapter I: SiC Material
Abstract:Bulk 4H-SiC crystals were grown on 4° off-axis seeds by the physical vapor transport technique. Two completely different surface morphologies...
68