Paper Title:
Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers
  Abstract

We have studied the application of optical techniques for the determination of the spatial distribution of electronic properties of highly aluminum doped p-type SiC wafers. Absorption and birefringence mapping are known to be sensitive characterization methods to determine the homogeneity of charge carrier concentration and defects in n-type SiC. In the case of highly p-type doped SiC these methods fail due to the opaque character of the material. In this paper we show that Raman spectroscopy which is a reflective method can be used in order to address the same materials properties like absorption and birefringence. The study was performed using medium doped p-type SiC:Al where optical transmission and reflection methods can be applied simultaneously.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
393-396
DOI
10.4028/www.scientific.net/MSF.483-485.393
Citation
P. J. Wellmann, R. Müller, M. Pons, A. Thuaire, A. Crisci, M. Mermoux, L. Auvray, "Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al Wafers", Materials Science Forum, Vols. 483-485, pp. 393-396, 2005
Online since
May 2005
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