Paper Title:
Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC
  Abstract

We report a detailed investigation of the electrical properties of p-type 4H-SiC. In the range 100 K-800 K we show that, both, the temperature dependence of the hole concentration and Hall mobility is satisfactorily described using the relaxation time approximation. Performing a detailed comparison of in-situ vs. implantation doping, we evidence an incomplete activation of the dose (about 50 ±10 %) with apparition of a large number of compensating centres in the implanted layers.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
401-404
DOI
10.4028/www.scientific.net/MSF.483-485.401
Citation
J. Pernot, S. Contreras, J. Camassel, J.-L. Robert, "Electrical Properties of p-Type In-Situ Doped vs. Al-Implanted 4H-SiC ", Materials Science Forum, Vols. 483-485, pp. 401-404, 2005
Online since
May 2005
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