Paper Title:
Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay
  Abstract

A Microwave Photoconductivity Decay (M-PCD) technique which senses changes insample conductivity as carriers recombine following excitation by a laser pulse, has been used to determine the minority carrier recombination lifetime from the decay rate of carriers in 4H-SiC epitaxial layers. Decay times varying from 60 ns to 500 ns have been measured, with the decay increasing with thickness. Device simulations show that I-V characteristics of pin diodes fabricated with these epitaxial layers are compatible with the observed decay times.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
405-408
DOI
10.4028/www.scientific.net/MSF.483-485.405
Citation
R.J. Kumar, P. A. Losee, C. H. Li, J. Seiler, I. Bhat, T. P. Chow, J.M. Borrego, R. J. Gutmann, "Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity Decay", Materials Science Forum, Vols. 483-485, pp. 405-408, 2005
Online since
May 2005
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