Paper Title:
Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals
  Abstract

We applied four-wave mixing (FWM) technique for investigation of high temperaturechemical vapour deposition (HTCVD) grown 4H-SiC samples with different doping levels. The determined minority electron and hole mobilities in heavily doped crystals at doping densities of 1019 cm-3 were found to be equal to 116 and 52 cm2/Vs. In semi-insulating (SI) crystals, the ambipolar diffusion coefficient Da = 2.6 − 3.3 cm2/s and carrier lifetimes of 1.5 – 2.5 ns have been measured. Irradiation of SI crystals by 6 MeV electrons resulted in essential decrease of carrier lifetime down to ~ 100 ps and clearly revealed the defect-assisted carrier generation with respect to two-photon interband transitions before irradiation.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
409-412
DOI
10.4028/www.scientific.net/MSF.483-485.409
Citation
L. Storasta, R. Aleksiejūnas, M. Sūdžius, A. Kadys, T. Malinauskas, K. Jarašiūnas, B. Magnusson, E. Janzén, "Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC Crystals", Materials Science Forum, Vols. 483-485, pp. 409-412, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Neimontas, Arunas Kadys, R. Aleksiejūnas, Kęstutis Jarašiūnas, Gil Yong Chung, Edward K. Sanchez, Mark J. Loboda
Abstract:We applied a non-degenerate four wave mixing (FWM) technique to investigate carrier generation, diffusion and recombination processes in...
469
Authors: Kęstutis Jarašiūnas, T. Malinauskas, R. Aleksiejunas, Bo Monemar, V. Ralchenko, A. Gontar, E. Ivakin
Abstract:Defect related carrier recombination and transport properties have been investigated in differently doped HVPE GaN substrates and CVD...
1301
Authors: Arunas Kadys, Patrik Ščajev, Georgios Manolis, Vytautas Gudelis, Kęstutis Jarašiūnas, Pavel L. Abramov, Sergey P. Lebedev, Alexander A. Lebedev
Abstract:Photoelectric properties of 3C sublimation-grown epitaxial layers with different structural quality were studied by using time-resolved...
219
Authors: Georgios Manolis, Georgios Zoulis, Sandrine Juillaguet, Jean Lorenzzi, Gabriel Ferro, Jean Camassel, Kęstutis Jarašiūnas
Abstract:Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL)...
443
Authors: Patrik Ščajev, Pavels Onufrijevs, Georgios Manolis, Mindaugas Karaliūnas, Saulius Nargelas, Nikoletta Jegenyes, Jean Lorenzzi, Gabriel Ferro, Milena Beshkova, Remigijus Vasiliauskas, Mikael Syväjärvi, Rositza Yakimova, Masashi Kato, Kęstutis Jarašiūnas
Chapter 4: Characterization: Devices and Material
Abstract:We applied a number of time-resolved optical techniques for investigation of optical and photoelectrical properties of cubic SiC grown by...
159