Paper Title:
Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt
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Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
421-424
DOI
10.4028/www.scientific.net/MSF.483-485.421
Citation
P. Godignon, C. Jacquier, S. Blanqué, J. Montserrat, G. Ferro, S. Contreras, M. Zielinski, Y. Monteil, "Electrical Characterisation of Heavily Al Doped 4H-SiC Layer Grown by Vapour-Liquid-Solid Epitaxy in Al-Si Melt", Materials Science Forum, Vols. 483-485, pp. 421-424, 2005
Online since
May 2005
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