Paper Title:
Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals
  Abstract

We present experimental results with regard to the evaluation of growth-induced polytype domains in 6H-SiC crystals grown by sublimation method and these domains are characterized by using the polarized optical microscopy and micro-Raman spectroscopy. The polytype domains of reverse triangular are generated by local variation of temperature along cdirection and spread-wing shapes normally occurred forming micropipes in many cases. These polytype domains may be generated due to the local variation of supersaturation and/or temperature at central position during crystal growth. In this work, we try to elucidate the origin and mechanism responsible for growth-induced polytype domains.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
43-46
DOI
10.4028/www.scientific.net/MSF.483-485.43
Citation
S. H. Seo, J. S. Song, M. H. Oh, Y. Z. Wang, "Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals", Materials Science Forum, Vols. 483-485, pp. 43-46, 2005
Online since
May 2005
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$32.00
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