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Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single Crystals

Journal Materials Science Forum (Volumes 483 - 485)
Volume Silicon Carbide and Related Materials 2004
Edited by Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages 43-46
DOI 10.4028/www.scientific.net/MSF.483-485.43
Citation Soo Hyung Seo et al., 2005, Materials Science Forum, 483-485, 43
Online since May, 2005
Authors Soo Hyung Seo, Joon Suk Song, Myung Hwan Oh, Yen Zen Wang
Keywords 15R-SiC, 4H-SiC, 6H-SiC, Micropipe, Polytype Domain
Abstract

We present experimental results with regard to the evaluation of growth-induced polytype domains in 6H-SiC crystals grown by sublimation method and these domains are characterized by using the polarized optical microscopy and micro-Raman spectroscopy. The polytype domains of reverse triangular are generated by local variation of temperature along cdirection and spread-wing shapes normally occurred forming micropipes in many cases. These polytype domains may be generated due to the local variation of supersaturation and/or temperature at central position during crystal growth. In this work, we try to elucidate the origin and mechanism responsible for growth-induced polytype domains.

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