Paper Title:
Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission
  Abstract

Structural defects in SiC crystals were investigated and 4H-SiC pin devices were characterized by micro-Raman scattering and photoemission. With the experimental set-up presented, defects could be successfully detected in SiC crystals but stacking faults could not be detected with micro-Raman scattering, although they could be detected by photoemission. Residual stress could be evaluated in 4H-SiC devices, as well as the temperature increase associated with the devices powering. A good correlation was found between the characterization techniques used: micro-Raman scattering and photoemission.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
437-440
DOI
10.4028/www.scientific.net/MSF.483-485.437
Citation
A. Thuaire, M. Mermoux, A. Crisci, N. Camara, E. Bano, F. Baillet, E. Pernot, "Characterisation of 4H-SiC PiN Diodes by Micro-Raman Scattering and Photoemission", Materials Science Forum, Vols. 483-485, pp. 437-440, 2005
Online since
May 2005
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Price
$32.00
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