Paper Title:
Hall Effect in the Channel of 3C-SiC MOSFETs
  Abstract

Temperature-dependent Hall effect investigations in the channel of lateral 3C-SiC LDDMOSFETs with nitrogen(N)-implanted source/drain regions are conducted. The free electron concentration and the electron Hall mobility are independently determined. A maximum electron Hall mobility of 75 cm2/Vs is observed. The gate oxide withstands electric field strengths up to 5 MV/cm. A high density of interface states of a few 1013 cm-2eV-1 close to the 3C-SiC conduction band edge still lowers the performance of the MOS device.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
441-444
DOI
10.4028/www.scientific.net/MSF.483-485.441
Citation
M. Krieger, G. Pensl, M. Bakowski, A. Schöner, H. Nagasawa, M. Abe, "Hall Effect in the Channel of 3C-SiC MOSFETs", Materials Science Forum, Vols. 483-485, pp. 441-444, 2005
Online since
May 2005
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