Paper Title:
Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals
  Abstract

Several SiC bulk crystals were grown with erbium and ytterbium as doping materials. Erbium contents determined by secondary ion mass spectroscopy (SIMS) ranged from 1.2 · 1014 cm-3 to 1.04 · 1015 cm-3, while ytterbium contents were below SIMS detection limit. Photoluminescence (PL) investigations of the characteristic 4f-4f-transition lines revealed a reduced luminescence yield in highly nitrogen and aluminum co-doped samples. Also, samples without intentional co-doping grown on the C-face showed less luminescence intensity than those grown on the Si-face. A stabilizing effect of erbium doping on the 4H polytype was observed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
445-448
DOI
10.4028/www.scientific.net/MSF.483-485.445
Citation
H. Schmitt, R. Müller, M. Maier, A. Winnacker, P. J. Wellmann, "Photoluminescence Study of In-Situ Rare Earth Doped PVT-Grown SiC Single Crystals", Materials Science Forum, Vols. 483-485, pp. 445-448, 2005
Online since
May 2005
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$32.00
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