Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)
| Periodical | Materials Science Forum (Volumes 483 - 485) |
|---|---|
| Main Theme | Silicon Carbide and Related Materials 2004 |
| Edited by | Roberta Nipoti, Antonella Poggi and Andrea Scorzoni |
| Pages | 453-456 |
| DOI | 10.4028/www.scientific.net/MSF.483-485.453 |
| Citation | T. Acartürk et al., 2005, Materials Science Forum, 483-485, 453 |
| Online since | May, 2005 |
| Authors | T. Acartürk, Kurt Semmelroth, Gerhard Pensl, Stephen E. Saddow, Ulrich Starke |
| Keywords | Concentration, Depth Profiling, Detection Limits, Dopant, Nitrogen, Phosphorous, Silicon Carbide (SiC), SIMS, ToF-SIMS |
| Price | US$ 28,- |
The concentration of nitrogen and phosphorous in SiC bulk material and epitaxial layers was investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). The advantage of TOF-SIMS of acquiring a complete mass spectrum in a single run was used to identify the most sensitive atomic ion or ionic cluster for the selected element to be monitored. For the investigation of N with its intrinsic low ionization yield the use of a Cs containing cluster ion is necessary. Selection of a CNCs2 + cluster allows to reach a detection limit of about cN,min » 5×1016 cm-3. In the case of P the elemental ion was used. However, the adjacent mass of 30SiH influences the P peak as well as its background and has to be suppressed. This can be achieved by limiting the residual gas re-adsorption during the measurement resulting in a detection limit of about cP,min » 5×1015 cm-3. These measurement parameters were used to investigate a single crystal SiC bulk sample grown by the modified Lely method with intentional P doping and an N doped epitaxial SiC layer sample.
