Paper Title:
Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist
  Abstract

SiC technology is presently still burdened by a number of problems caused by process- or operation-induced defects. Experimental materials characterization in cooperation with atomistic modeling can be helpful in designing strategies against them. In recent years, considerable theoretical effort has been devoted to clarify the dynamics of defect creation and the mechanisms of dopant (de)activation. The investigation of epitaxial growth and of thermal oxidation has also begun. Here an attempt is made to survey the most important theoretical results of the past four years from Europe.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
457-464
DOI
10.4028/www.scientific.net/MSF.483-485.457
Citation
P. Deák, "Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a Theorist", Materials Science Forum, Vols. 483-485, pp. 457-464, 2005
Online since
May 2005
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Price
$32.00
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