Paper Title:
Observation of Vacancy Clusters in HTCVD Grown SiC
  Abstract

Positron lifetime spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapor deposition (HTCVD). The measured positron lifetime spectra can be decomposed into two components, of which the longer corresponds to vacancy clusters. We have carried out atomic superposition calculations to estimate the size of these clusters.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
469-472
DOI
10.4028/www.scientific.net/MSF.483-485.469
Citation
R. Aavikko, K. Saarinen, B. Magnusson, E. Janzén, "Observation of Vacancy Clusters in HTCVD Grown SiC", Materials Science Forum, Vols. 483-485, pp. 469-472, 2005
Online since
May 2005
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Price
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