Paper Title:
SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design
  Abstract

SiC crystal boules with different shapes were prepared using sublimation physical vapor transport technique (PVT) and then their crystal quality was systematically investigated. The temperature distribution in the growth system and the crystal shape were controlled by modification of crucible and insulation felt design, which was successfully simulated using “Virtual Reactor” for flat structure design and concave structure design. The SiC polytype proved to be the n-type 6H-SiC from the typical absorption spectrum of SiC crystal. The defect density of SiC crystal boules with concave structure was slightly lower than that of flat structure and the crystal quality of SiC crystal boules with both flat structure and concave structure was significantly improved as the SiC crystal grows during the PVT methods.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
47-50
DOI
10.4028/www.scientific.net/MSF.483-485.47
Citation
J. K. Kim, K. R. Ku, D. J. Kim, S. P. Kim, W. J. Lee, B. C. Shin, G. H. Lee, I. S. Kim, "SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design", Materials Science Forum, Vols. 483-485, pp. 47-50, 2005
Online since
May 2005
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Price
$32.00
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