Paper Title:
The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC
  Abstract

We identify the VSiCSi(SiCCSi) complex in electron-irradiated 6H-SiC samples. Based on the analysis of new photo-excited EPR spectra, and supported by theoretical calculations, it was possible to establish its microscopic structure and to conclude that this complex is formed from the first product of the Si-vacancy annealing, the VSiCSi complex (also known as P6/P7 centers).

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
477-480
DOI
10.4028/www.scientific.net/MSF.483-485.477
Citation
M.V.B. Pinheiro, E. Rauls, U. Gerstmann, S. Greulich-Weber, J. M. Spaeth, "The VSiCSi(SiCCSi) Complex in Electron-Irradiated 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 477-480, 2005
Online since
May 2005
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