Paper Title:
Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers
  Abstract

Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 °C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 °C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 °C a main level at Ec-0.43 eV (E1/E2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E1/E2 level is mainly responsible for the luminescence quenching after irradiation.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
485-488
DOI
10.4028/www.scientific.net/MSF.483-485.485
Citation
A. Ruggiero, M. Zimbone, F. Roccaforte, S. Libertino, F. La Via, R. Reitano, L. Calcagno, "Defect Evolution in Ion Irradiated 6H-SiC Epitaxial Layers", Materials Science Forum, Vols. 483-485, pp. 485-488, 2005
Online since
May 2005
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