Paper Title:
Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC
  Abstract

A set of four lightly p-type 6H SiC boule samples was implanted with H or He and annealed in isochronal stages from 950°C to 1500°C. Differences in the hydrogen, DI and DII low temperature photoluminescence spectra are observed and compared. Surprisingly, the hydrogen spectrum appears after a 1300°C anneal in the He implanted samples. A number of unidentified damage lines are also reported.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
493-496
DOI
10.4028/www.scientific.net/MSF.483-485.493
Citation
F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, F. Schmid, G. Pensl, G. Wagner, "Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiC", Materials Science Forum, Vols. 483-485, pp. 493-496, 2005
Online since
May 2005
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Price
$32.00
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