Paper Title:
M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate
  Abstract

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
497-500
DOI
10.4028/www.scientific.net/MSF.483-485.497
Citation
H. K.-Nielsen, A. Hallén, D.M. Martin, B. G. Svensson, "M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission Rate ", Materials Science Forum, Vols. 483-485, pp. 497-500, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: K. Narita, Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida, Junji Senzaki, Shinichi Nakashima
905
Authors: Konstantin Vassilevski, J. Hedley, Alton B. Horsfall, C. Mark Johnson, Nicolas G. Wright
925
Authors: Ivan V. Ilyin, Marina V. Muzafarova, P.G. Baranov, B.Ya. Ber, A.N. Ionov, E.N. Mokhov, Pavel A. Ivanov, M.A. Kaliteevskii, P.S. Kop'ev
Abstract:High concentration of two types of P donors up to 1017 cm-3 in SiC enriched with 30Si after neutron transmutation doping (NTD) has been...
599
Authors: N. Chuchvaga, E. Bogdanova, A. Strelchuk, Evgenia V. Kalinina, D.B. Shustov, M. Zamoryanskaya, V. Shkuratov
Chapter 7: Electrical and Structural Characterization
Abstract:A comparative research of the cathodoluminescence and electrical characteristics of the samples 4H-SiC irradiated with high energy Xe ions...
625