Paper Title:
Effective-Mass Theory of Shallow Donors in 4H-SiC
  Abstract

The one-valley effective-mass approximation is developed for the case of uniaxial crystals with indirect bandgap and applied to the donor states in 4H-SiC. Good agreement is found between the theory and experiments providing data on the electronic states of the shallowest nitrogen donor in 4H-SiC. The ionization energy of this donor is deduced to be 61.35 ± 0.2 meV.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
511-514
DOI
10.4028/www.scientific.net/MSF.483-485.511
Citation
I. G. Ivanov, A. Stelmach, M. Kleverman, E. Janzén, "Effective-Mass Theory of Shallow Donors in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 511-514, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: P. Terziyska, Julien Pernot, Sylvie Contreras, Jean-Louis Robert, Lea Di Cioccio, Thierry Billon
399
Authors: Andreas Gällström, Björn Magnusson, Aurelie Thuaire, Plamen PASKOV, Anne Henry, Erik Janzén
Abstract:The photoluminescence (PL) of the UD-4 defect is observed in semi-insulating bulk 4H, 6H and 15R SiC. In 4H and 6H SiC the UD-4 defect...
397
Authors: Fei Yan, Robert P. Devaty, Wolfgang J. Choyke, Tsunenobu Kimoto, Takeshi Ohshima, Gerhard Pensl, Adam Gali
Abstract:In this paper we revisit sharp low temperature luminescence lines (LTPL) previously generated by high dose 1018 to 1020 cm-2 electron beams...
411