Paper Title:
Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects
  Abstract

Interaction of boron and aluminum with interstitial carbon is studied using first principles calculations. It is shown that carbon can form very stable complexes with Al and B, forming a family of negative-U bistable defects with deep levels. The influence of this effect on the activation rate of p-type implants is discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
519-522
DOI
10.4028/www.scientific.net/MSF.483-485.519
Citation
A. Gali, T. Hornos, P. Deák, N. T. Son, E. Janzén, W. J. Choyke, "Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects", Materials Science Forum, Vols. 483-485, pp. 519-522, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Xing Rong Zheng, Chun Ling Tian, Jiao Yang, Yun Fu
V. Basic Research, Application, Education, Design and Engineering of Material Science
Abstract:Describing the electron-electron interaction contribution to the Helmholtz free energy, we obtained a new fitting formula by revising the...
701
Authors: Xing Zhao Wu, Xue Di Wang, Shu Yi Wei, Ying Dong
Chapter 13: Environment and Environmental Engineering
Abstract:Since grey prediction model performed well in feasting with few data, we applied it to predicting water withdrawals. We take the prediction...
954