Paper Title:
3d-Transition Metals in Cubic and Hexagonal Silicon Carbide
  Abstract

The electronic and structural properties of isolated 3d-transition metal impurities in 3C, 4H, and 2H silicon carbide have been investigated bytotal energy ab initio methods. The stability, spin states and transition energies of substitutional (Si sub-lattice) Cr, Mn, and Fe impurities in several charge states were computed. Our results are discussed in the context of available experimental data.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
531-534
DOI
10.4028/www.scientific.net/MSF.483-485.531
Citation
W.V.M. Machado, J. F. Justo, L. V.C. Assali, "3d-Transition Metals in Cubic and Hexagonal Silicon Carbide", Materials Science Forum, Vols. 483-485, pp. 531-534, 2005
Online since
May 2005
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