Paper Title:
Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation
  Abstract

Hydrogenation of SiC surfaces was carried out by annealing in ultra-pure hydrogen at temperatures of around 1000°C. The hydrogenated surfaces were studied using a variety of techniques and show exceptional properties which are discussed in the light of earlier studies of Si and SiC surfaces and interfaces.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
535-540
DOI
10.4028/www.scientific.net/MSF.483-485.535
Citation
T. Seyller, "Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface Formation", Materials Science Forum, Vols. 483-485, pp. 535-540, 2005
Online since
May 2005
Authors
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Valeri V. Afanas'ev, Florin Ciobanu, Sima Dimitrijev, Gerhard Pensl, Andre Stesmans
Abstract:Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the...
563
Authors: Wolfgang Düngen, Reinhart Job, Yue Ma, Yue Long Huang, Wolfgang R. Fahrner, L.O. Keller, J.T. Horstmann
Abstract:µ-Raman measurements were carried out on hydrogen implanted, plasma hydrogenated and subsequently annealed Cz Silicon samples, respectively....
91
Authors: Guido Roma, Fabien Bruneval, Li Ao Ting, Olga Natalia Bedoya Martínez, Jean Paul Crocombette
Plenary
Abstract:We present here an overview of native point defects calculations in silicon carbide using Density Functional Theory, focusing on defects...
11
Authors: Zhong Liang Liu, Chao Yang Kang, Le Le Fan, Chong Wen Zou, Peng Shou Xu
Chapter 1: Traditional Building Materials
Abstract:Graphene film has been successfully grown on Cu foil by directly depositing carbon atoms with a solid source molecular beam epitaxy (SSMBE)...
241
Authors: Xuan Thang Trinh, Andreas Gällström, Nguyen Tien Son, Stefano Leone, Olle Kordina, Erik Janzén
Chapter 5: Characterization of Material and Point Defects
Abstract:Defects in unintentionally Nb-doped 6H-SiC grown by high-temperature chemical vapor deposition were studied by electron paramagnetic...
385