Paper Title:
Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)
  Abstract

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
547-550
DOI
10.4028/www.scientific.net/MSF.483-485.547
Citation
K. V. Emtsev, T. Seyller, L. Ley, A. Tadich, L. Broekman, E. Huwald, J.D. Riley, R.C.G. Leckey, "Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)", Materials Science Forum, Vols. 483-485, pp. 547-550, 2005
Online since
May 2005
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Price
$32.00
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