Paper Title:
SiC/SiO2 Interface States: Properties and Models
  Abstract

Properties of defects encountered at the oxidized surfaces of silicon carbide (SiC) suggest their origin to be different from the dangling-bond-type defects commonly observed in the oxidized silicon. Among different models of these SiC/oxide interface states advanced during the past decade, two have received substantial experimental support. This first one is the “carbon cluster” model, which ascribes the traps with energy levels in the SiC bandgap to inclusions of elemental carbon formed during the SiC surface treatment and subsequent oxidation. The second model invokes intrinsic defects of SiO2 to account for the high density of interface states in the energy range close to the conduction band of SiC. Achievements in reducing the SiC/SiO2 defect density are discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
563-568
DOI
10.4028/www.scientific.net/MSF.483-485.563
Citation
V. V. Afanas'ev, F. Ciobanu, S. Dimitrijev, G. Pensl, A. Stesmans, " SiC/SiO2 Interface States: Properties and Models ", Materials Science Forum, Vols. 483-485, pp. 563-568, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Tsunenobu Kimoto, Gan Feng, Toru Hiyoshi, Koutarou Kawahara, Masato Noborio, Jun Suda
Abstract:Extended defects and deep levels generated during epitaxial growth of 4H-SiC and device processing have been reviewed. Three types in-grown...
645
Authors: Ruggero Anzalone, Stefania Privitera, Alessandra Alberti, Nicolo’ Piluso, Patrick Fiorenza, Francesco La Via
Chapter IV: SiC Devices and Circuits
Abstract:The effect of the crystal quality and surface morphology on the electrical properties of MOS capacitors has been studied in devices...
773
Authors: Heng Yu Xu, Qian Yang, Xiao Lei Wang, Xin Yu Liu, Yan Li Zhao, Cheng Zhan Li, Heiji Watanabe
Chapter III: Processing of SiC
Abstract:A high-temperature process is used to enhance the COx desorption rate to reduce trap density in SiC/SiO2 interface for...
484
Authors: Eddy Simoen, Valentina Ferro, Barry O’Sullivan
Chapter 2: Passivation and Defect Studies in Solar Cells
Abstract:Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Insulator-Semiconductor (MIS) capacitors, consisting of a p+ or...
61