Paper Title:
Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor
  Abstract

The present production processes for epitaxial SiC do not allow the matching of productivity with the material quality requested by the microelectronics market. Here, to respond to such a demand, a combined experimental and multi-scale – multi-hierarchy modeling approach was adopted. Models allow to verify a priori the role of process operative parameters on the performance ones for both the final product and of the process itself, like growth rate uniformity, film stoichiometry and dopants incorporation, homogeneous nucleation of particulate, microdefects and film morphology. Specifically, in this work the developing of a lumped deposition mechanism is addressed

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
57-60
DOI
10.4028/www.scientific.net/MSF.483-485.57
Citation
A. Veneroni, F. Omarini, M. Masi, S. Leone, M. Mauceri, G. Pistone, G. Abbondanza, "Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD Reactor", Materials Science Forum, Vols. 483-485, pp. 57-60, 2005
Online since
May 2005
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Price
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