Paper Title:
Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation
  Abstract

Thermal oxide films on SiC epitaxial (000-1) C-faces have been characterized by angle-resolved photoemission spectroscopy (AR-PES). The structure of wet oxide/SiC C-face interface was compared with that of dry oxide/SiC C-face, as well as that of dry oxide/SiC Si-face, in order to clarify why a MOS device of SiC C-face achieved good electrical properties. The improvement in electrical properties was confirmed by AR-PES measurements, evidencing differences in binding energy between SiC and the Si4+ components in Si2p and valence band region, and in binding energy between SiC and the CHx components in C1s. The reason for the improvement in electrical property of MOS devices by use of SiC C-face are discussed in terms of depth profiles of oxide films calculated from the AR-PES results.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
585-588
DOI
10.4028/www.scientific.net/MSF.483-485.585
Citation
Y. Hijikata, H. Yaguchi, S. Yoshida, Y. Takata, K. Kobayashi, S. Shin, H. Nohira, T. Hattori, "Characterization of Oxide Films on SiC Epitaxial (000-1) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron Radiation", Materials Science Forum, Vols. 483-485, pp. 585-588, 2005
Online since
May 2005
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$32.00
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