Paper Title:
Technological Aspects of Ion Implantation in SiC Device Processes
  Abstract

Technological aspects of ion implantation in SiC device processes are described. Annealing techniques to suppress surface roughening of implanted SiC (0001) are demonstrated. Trials to achieve a low sheet resistance are described for n-type and p-type doping. Implantation into the (11-20) face is also presented. Electrical behaviors of implants near implanted tail regions are discussed based on experiments.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
599-604
DOI
10.4028/www.scientific.net/MSF.483-485.599
Citation
Y. Negoro, T. Kimoto, H. Matsunami, "Technological Aspects of Ion Implantation in SiC Device Processes", Materials Science Forum, Vols. 483-485, pp. 599-604, 2005
Online since
May 2005
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Price
$32.00
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