Paper Title:
Fabrication of Compact Ion Implanter for Silicon Carbide Devices
  Abstract

Most of the ion implanter is large scale, high acceleration voltage and expensive. For research and development, such a huge implanter is not required. Our motivation is to make desktop type ion implanter for SiC device. We report the fabrication of a compact 100 kV ion implanter. In order to miniaturize the equipment, an ion source, an accelerator tube and a main chamber were vertically arranged. We implanted Argon (Ar) and Nitrogen (N) ions to 6H-SiC substrate and the implanted 6H-SiC substrates were characterized by Fourier Transform Infrared Spectrometer (FTIR), Rutherford Backscattering Spectrometry (RBS) and Secondary Ion Mass Spectrometry (SIMS). In this report, concept of desktop ion implanter, evaluation of implanted substrate and its device application are presented. In order to characterize capability, with using the newly made compact ion implanter, it was possible to make implantation on SiC to get amorphous layer suitable for deices.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
605-608
DOI
10.4028/www.scientific.net/MSF.483-485.605
Citation
S. Mitani, S. Yamaguchi, S. Furukawa, T. Nakata, Y. Horino, R. Ono, Y. Hosokawa, M. Miyamoto, S. Nishino, "Fabrication of Compact Ion Implanter for Silicon Carbide Devices", Materials Science Forum, Vols. 483-485, pp. 605-608, 2005
Online since
May 2005
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Price
$32.00
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