Paper Title:
SiC and III-Nitride Growth in Hot-Wall CVD Reactor
  Abstract

The Hot-Wall CVD reactor was developed for the thick epitaxial SiC layers needed for high voltage power devices but its inherent better properties – better cracking efficiency of the precursor gases and better lateral and vertical temperature homogeneity – should also influence the growth of other materials such as the III-nitrides. We will give some examples of thick SiC layers grown on either off- or on-axis substrates with this technique. We will also show that high-quality III-nitride materials can be grown.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
61-66
DOI
10.4028/www.scientific.net/MSF.483-485.61
Citation
E. Janzén, P. Bergman, Ö. Danielsson, U. Forsberg, C. Hallin, J. Ul Hassan, A. Henry, I. G. Ivanov, A. Kakanakova-Georgieva, P.O.Å. Persson, Q. Wahab, "SiC and III-Nitride Growth in Hot-Wall CVD Reactor", Materials Science Forum, Vols. 483-485, pp. 61-66, 2005
Online since
May 2005
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$32.00
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