Paper Title:
Aluminium Implantation Induced Linear Surface Faults in 4H-SiC
  Abstract

New results are presented of a surface trench defect observed during anneal of room temperature Al implants. The size of the surface defect is proportional to anneal temperature and occurs predominantly in the implanted zone. Signs of lattice strain are observed outside the implanted zone as well.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
613-616
DOI
10.4028/www.scientific.net/MSF.483-485.613
Citation
N. G. Wright, K. Vassilevski, I. P. Nikitina, A. B. Horsfall, C. M. Johnson, P. Bhatnagar, P. Tappin, "Aluminium Implantation Induced Linear Surface Faults in 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 613-616, 2005
Online since
May 2005
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