Paper Title:
Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing
  Abstract

The authors have investigated electrical behavior of implanted Al and B atoms near a “tail” region in 4H-SiC (0001) after high-temperature annealing. For aluminum-ion (Al+) implantation, slight in-diffusion of Al implants occurs in the initial stage of annealing at 1700 °C. Nearly all of implanted Al atoms, including the in-diffused Al atoms were activated by annealing at 1700 °C for 1 min. Several electrically deep centers are formed by Al+ implantation. The concentrations of the centers are 3-4 orders-of-magnitude lower than that of implanted Al-atom concentration. For boron-ion (B+) implantation, significant out- and in-diffusion of B implants occur in the initial stage of annealing at 1700 °C. Most of the in-diffused B implants work as B acceptors. A high density of B-related D center exists near the tail region. To suppress the B diffusion, a ten-times higher dose of carbon-ion (C+) co-implantation is effective. However, high concentrations of additional deep centers are introduced by such high-dose C+ co-implantation.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
617-620
DOI
10.4028/www.scientific.net/MSF.483-485.617
Citation
Y. Negoro, T. Kimoto, H. Matsunami, "Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing", Materials Science Forum, Vols. 483-485, pp. 617-620, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Hideharu Matsuura, K. Sugiyama, Kimito Nishikawa, T. Nagata, N. Fukunaga
447
Authors: Yuki Negoro, Tsunenobu Kimoto, Hiroyuki Matsunami
Abstract:Technological aspects of ion implantation in SiC device processes are described. Annealing techniques to suppress surface roughening of...
599
Authors: Ryo Hattori, Tomokatsu Watanabe, T. Mitani, Hiroaki Sumitani, Tatsuo Oomori
Abstract:Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals were experimentally investigated....
585
Authors: Svetlana Beljakowa, Sergey A. Reshanov, Bernd Zippelius, Michael Krieger, Gerhard Pensl, Katsunori Danno, Tsunenobu Kimoto, Shinobu Onoda, Takeshi Ohshima, Fei Yan, Robert P. Devaty, Wolfgang J. Choyke
Abstract:Aluminum-doped 4H-SiC samples were either irradiated with high-energy electrons (170 keV or 1 MeV) or implanted with a box-shaped...
427
Authors: Kazuki Yoshihara, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima
Chapter 5: Characterization of Material and Point Defects
Abstract:We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient...
373