Paper Title:
Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation
  Abstract

We report a full wafer scale investigation of the activation of nitrogen and phosphorus ions co-implanted at room temperature in a 4H-SiC semi-insulating wafer. We used a full 35 mm wafers on which, after implantation and annealing, 77 reticules with Hall bars and TLM motifs were processed. We found an average sheet resistance of 531 W/square with 30 W/square standard deviation.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
645-648
DOI
10.4028/www.scientific.net/MSF.483-485.645
Citation
S. Blanqué, J. Lyonnet, J. Camassel, R. Pérez, P. Terziyska, S. Contreras, P. Godignon, N. Mestres, J. Pascual, "Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale Investigation", Materials Science Forum, Vols. 483-485, pp. 645-648, 2005
Online since
May 2005
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Price
$32.00
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