Paper Title:
n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature
  Abstract

n+/p diodes have been realized by 300°C phosphorus ion implantation and subsequent annealing at 1300°C. An electrical characterization of the devices as well as a study of the defects introduced by the implantation process has been made. I-V measurements pointed out that the diodes maintain a good rectifying behavior up to 737K. DLTS analyses detected the presence of three traps, T2, T3 and T4, which are not due to the implantation process, and a high energy trap, T5, that could be related to the surface states at the Ni/SiC interface.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
649-652
DOI
10.4028/www.scientific.net/MSF.483-485.649
Citation
M. Canino, A. Castaldini, A. Cavallini, F. Moscatelli, R. Nipoti, A. Poggi, "n+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of Temperature", Materials Science Forum, Vols. 483-485, pp. 649-652, 2005
Online since
May 2005
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Price
$32.00
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