Paper Title:
The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC
  Abstract

The mechanisms of oxygen incorporation during dry thermal oxidation of 6H-SiC wafers were investigated. Isotopic tracing of oxygen was performed by sequential oxidations in dry O2 enriched or not in the 18O isotope and subsequent determinations of the 18O profiles. The results obtained with SiC substrates were compared with those of Si, evidencing different mechanisms of oxygen incorporation and transport. The gradual nature of the SiO2/SiC interface was also evidenced. A probable explanation for this gradual SiO2/SiC interface is shown to be the formation of C clusters during oxidation.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
657-660
DOI
10.4028/www.scientific.net/MSF.483-485.657
Citation
C. Radtke, I. J.R. Baumvol, B.C. Ferrera, F. C. Stedile, "The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 657-660, 2005
Online since
May 2005
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