Paper Title:
Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC
  Abstract

The wet oxidation of (0001), Si-face, 6H-SiC pre-amorphised by Ar+ implantation has been investigated in the temperature range between 750 and 950 °C. Electron microscopy analysis has been performed to obtain information on the evolution of the amorphous layer during the oxidation process. When the oxidation occurs on the amorphous substrate the observed rate is given by VOx(a)=3.8x107exp(-1.6eV/kT) nm/min, by far faster than that observed on single or polycrystalline 6H-SiC. For amorphous layer thickness of a few hundreds nanometer and processing time of a few tens of minutes this happens up to oxidation temperatures of about 910 °C, owing to the concomitant recrystallization process. At higher temperature, our oxidation data support the existence of a sudden variation of the recrystallization process that rapidly reduces the residual amorphous region and, consequently, the oxide thickness. However, it appears that this second recrystallization stage is faster than previously estimated. Structural detail of the starting amorphous-crystalline interface and of the early-recrystallized layers are reported and discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
665-668
DOI
10.4028/www.scientific.net/MSF.483-485.665
Citation
A. Poggi, A. Parisini, S. Solmi, R. Nipoti, "Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiC", Materials Science Forum, Vols. 483-485, pp. 665-668, 2005
Online since
May 2005
Export
Price
$32.00
Share

In order to see related information, you need to Login.

In order to see related information, you need to Login.

Authors: Masataka Satoh, Tomoyuki Suzuki
Abstract:The impurity concentration dependence of the recrystallization rate of phosphorus implanted 4H-SiC(11-20) has been investigated by means of...
799
Authors: Tae Sik Cho, Min Su Yi, Do Young Noh, Seok Joo Doh, Jung Ho Je
Abstract:The crystallization of α-Fe2O3/α-Al2O3(0001) thin films has been studied using real-time synchrotron x-ray scattering and atomic force...
1213
Authors: Xue Tao Yuan, Dong Bai Sun, Zhi Qiang Hua, Lei Wang
Abstract:The growth morphology and structure of deposits during the initial stages of amorphous Ni-P electrodeposition was studied using atomic force...
535
Authors: Jing Lu, Yan Hui Wang
Abstract:Quasi atomic layer deposition method has been successfully used to coat detonation nanodiamonds with ultrathin silicon film from...
226
Authors: Zuzanna Liliental-Weber, R. dos Reis, A. Levander, Kin M. Yu, Wladek Walukiewicz, S.V. Novikov, C.T. Foxon
Abstract:This paper describes Transmission Electron Microscopy studies of the structural changes of GaN1-xAsx alloys grown by Molecular Beam Epitaxy...
74