Paper Title:
High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient
  Abstract

A high temperature rapid thermal processing (HT-RTP) above 1400oC was investigated for use in the gate oxide formation of 4H-SiC by a cold-wall oxidation furnace. The gate oxide film of ~50nm can be formed for several minutes in the oxidizing atmospheres such as N2O and O2, where the oxidation rates were 8-10nm/min. After the initial oxide formation, the HT-RTPs in various ambient gases were conducted, and the dependences of their MOS interface properties on the gases were evaluated by a capacitance-voltage (CV) measurement. Based on the results, the process sequence of gate oxidation was determined as follows; the initial oxide was formed by the HT-RTO (oxidation) in N2O or in O2 with subsequent post annealing in Ar ambient, and then the HT-RTN (nitridation) in NO was conducted. The total process time becomes 20-50min. The interface trap density (Dit) of fabricated MOS capacitor shows 3-5x1011cm-2eV-1 at Ec-E~0.2eV. The field-effect channel mobility of fabricated 4H-SiC lateral MOSFETs was ~30cm2/Vs.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
669-672
DOI
10.4028/www.scientific.net/MSF.483-485.669
Citation
R. Kosugi, K. Fukuda, K. Arai, "High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N2O and NO Ambient", Materials Science Forum, Vols. 483-485, pp. 669-672, 2005
Online since
May 2005
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