Paper Title:
New Achievements on CVD Based Methods for SiC Epitaxial Growth
  Abstract

The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
67-72
DOI
10.4028/www.scientific.net/MSF.483-485.67
Citation
D. Crippa, G. L. Valente, A. Ruggiero, L. Neri, R. Reitano, L. Calcagno, G. Foti, M. Mauceri, S. Leone, G. Pistone, G. Abbondanza, G. Abbagnale, A. Veneroni, F. Omarini, L. Zamolo, M. Masi, F. Roccaforte, G. Giannazzo, S. Di Franco, F. La Via, "New Achievements on CVD Based Methods for SiC Epitaxial Growth", Materials Science Forum, Vols. 483-485, pp. 67-72, 2005
Online since
May 2005
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$32.00
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