Paper Title:
4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O
  Abstract

Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O at 1300°C during relatively short times (15min) to produce SiO2 layers of 20-30nm. The interfacial characteristics of N2O oxidized RTCVD layers have been studied using the conductance method, showing a reduced traps density and a low band bending fluctuation when compared with conventional N2O grown oxides on 4H-SiC substrates. The surface topology of these layers has also been analyzed evidencing an adequate topography with low roughness.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
673-676
DOI
10.4028/www.scientific.net/MSF.483-485.673
Citation
A. Pérez-Tomás, D. Tournier, P. Godignon, N. Mestres, J. Millan, "4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N2O", Materials Science Forum, Vols. 483-485, pp. 673-676, 2005
Online since
May 2005
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Price
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