Paper Title:
Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
  Abstract

The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type 4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
697-700
DOI
10.4028/www.scientific.net/MSF.483-485.697
Citation
K. Fujihira, Y. Tarui, K. Ohtsuka, M. Imaizumi, T. Takami, "Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability", Materials Science Forum, Vols. 483-485, pp. 697-700, 2005
Online since
May 2005
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