Paper Title:
Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC
  Abstract

In this study, electrical properties of Al2O3 deposited by Atomic Layer Deposition (ALCVD) on n-type 4H-SiC were investigated. Metal-Oxide-Semiconductor (MOS) capacitors were characterized by various electrical techniques such as Capacitance-Voltage (CV), Current- Voltage (IV) and Deep Level Transient Spectroscopy (DLTS) measurements. Two different oxidants, H2O and O3, have been used for the oxide deposition. After deposition, the flat-band voltage shift is much less using O3 than H2O (~ 7V versus ~ 20V). Annealing treatment has been carried out at different temperatures in Ar atmosphere up to 700°C. Whereas the flat-band voltage shift can be reduced by annealing, the leakage current remains rather high.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
705-708
DOI
10.4028/www.scientific.net/MSF.483-485.705
Citation
M. Avice, U. Grossner, E. V. Monakhov, J. Grillenberger, O. Nilsen, H. Fjellvåg, B. G. Svensson, "Electrical Properties of Aluminium Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiC", Materials Science Forum, Vols. 483-485, pp. 705-708, 2005
Online since
May 2005
Keywords
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