Paper Title:
Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric
  Abstract

The electrical properties of Al2O3 as a gate dielectric in MOS structures based on n- and p-type 4H-SiC grown by sublimation method have been investigated and compared to the properties of similar structures utilizing SiO2. The electrically active defects in the structures are studied by CV method. The results show that the type as well as spatial and energy distribution of defects in Al2O3/SiC and SiO2/SiC samples are different. The structures with Al2O3 on p-type 4H-SiC demonstrate much better C-V characteristics than the p-type 4H-SiC/SiO2 structures.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
709-712
DOI
10.4028/www.scientific.net/MSF.483-485.709
Citation
A. Paskaleva, R.R. Ciechonski, M. Syväjärvi, E. Atanassova, R. Yakimova, "Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric", Materials Science Forum, Vols. 483-485, pp. 709-712, 2005
Online since
May 2005
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Price
$32.00
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Authors: Sethu Saveda Suvanam, Milad Ghadami Yazdi, Muhammad Usman, Mats Götelid, Anders Hallén
3.2 MOS Processing, SiC-SiO2 Interfaces and other Dielectrics
Abstract:In this paper, the interface between Al2O3 and p-type 4H-SiC is evaluated using x-ray photoelectron spectroscopy (XPS)...
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