Paper Title:
4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric
  Abstract

Oxidized Ta2Si layers have been used as high-k dielectric layer for 4H-SiC MOSFETs. The gate insulator was grown by dry oxidation of 40nm deposited Ta2Si during 1h at 1050oC. The dielectric constant obtained from 4H-SiC MIS capacitors is ~20 with an insulator thickness of 150nm. These devices exhibit adequate subthreshold, saturation and drive characteristics. For the MOSFETs fabricated on a p-implanted and annealed region, a peak mobility up to 45cm2/Vs has been extracted. The specific on-resistance of this device is 29mW·cm2 at room temperature with VDS=0.2V and VGS=14V.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
713-716
DOI
10.4028/www.scientific.net/MSF.483-485.713
Citation
A. Pérez-Tomás, P. Godignon, N. Mestres, J. Montserrat, J. Millan, "4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric", Materials Science Forum, Vols. 483-485, pp. 713-716, 2005
Online since
May 2005
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$32.00
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