Paper Title:
Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices
  Abstract

Silicon carbide (SiC) is a wide bandgap semiconductor suitable for high-voltage, highpower and high-temperature applications [1]. However, and among other issues, the production of advanced SiC power devices still remains limited due to some shortcomings of the dielectric properties of the passivation layer [2]. Due to their supposed high operating temperature and dielectric strength [3], spin coated polyimide materials appear as a possible candidates for SiC device passivation and insulation purposes. As a matter of fact, they are already used in current commercial SiC devices allowing a maximum junction temperature of 175 °C. The aim of this paper is to study the ability of polyimide (PI) coatings to be used for a Tjmax up to 300 °C. Therefore, the main electrical properties (dielectric permittivity, leakage current and breakdown field) at different temperatures of a high temperature commercially available polyimide material (from HD Microsystems) in both Metal-Insulator-Semiconductor (MIS) and Metal-Insulator-Metal (MIM) structures are presented and discussed.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
717-720
DOI
10.4028/www.scientific.net/MSF.483-485.717
Citation
S. Zelmat, M. L. Locatelli, T. Lebey, "Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices", Materials Science Forum, Vols. 483-485, pp. 717-720, 2005
Online since
May 2005
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$32.00
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