Paper Title:
Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
  Abstract

We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
721-724
DOI
10.4028/www.scientific.net/MSF.483-485.721
Citation
T. Nakamura, T. Miyanagi, H. Tsuchida, I. Kamata, T. Jikimoto, K. Izumi, "Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode", Materials Science Forum, Vols. 483-485, pp. 721-724, 2005
Online since
May 2005
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Price
$32.00
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