Paper Title:
Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing
  Abstract

An effect of electron beam annealing (EBA) on both surface morphology and characteristics of test Ti/n-6H-SiC contacts was investigated. It was found that the mean roughness of the n-6H-SiC surface decreased from 3.43 nm to 1.35 nm and the surface sheet resistance increased from 3.1 to 4.0 Ω/sq after EBA. The Ti/n-6H-SiC contacts formed on substrates after EBA exhibited ohmic properties, while the same contacts formed on the un-annealed samples were Schottky contacts with the barrier height of 0.63 eV and ideality factor of 1.92.

  Info
Periodical
Materials Science Forum (Volumes 483-485)
Edited by
Roberta Nipoti, Antonella Poggi and Andrea Scorzoni
Pages
725-728
DOI
10.4028/www.scientific.net/MSF.483-485.725
Citation
O. A. Agueev, S. P. Avdeev, A. M. Svetlichnyi, R. V. Konakova, V. V. Milenin, P. M. Lytvyn, O. S. Lytvyn, O. B. Okhrimenko, S. I. Soloviev, T. S. Sudarshan, "Surface Preparation of 6H-SiC Substrates by Electron Beam Annealing", Materials Science Forum, Vols. 483-485, pp. 725-728, 2005
Online since
May 2005
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